Fairchild Semiconductor FDC6305N, Discretes
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Fairchild Semiconductor FDC6305N Discretes

Fairchild Semiconductor FDC6305N Fairchild Semiconductor FDC6305N, Discretes
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Product Features
  • MOSFET
  • Transistor Polarity:Dual N Channel
  • Power Dissipation:0.900W
  • Drain-Source Breakdown Voltage:-200V
  • Continuous Drain Current, Id:2.7A
  • On-Resistance, Rds(on):0.08Ohm
  • Package/Case:SuperSOT-6
  • Leaded Process Compatible:Yes RoHS Compliant: Yes
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Comparable Specifications
Specification Value
RoHS Compliant  No 

 

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